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학술지 Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
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저자
장성재, 김동석, 김태우, 이정희, 배영호, 정현욱, 강수철, 김해천, 노윤섭, 이상흥, 김성일, 안호균, 임종원
발행일
202011
출처
Nanomaterials, v.10 no.11, pp.1-11
ISSN
2079-4991
출판사
MDPI
DOI
https://dx.doi.org/10.3390/nano10112175
협약과제
19VU1700, 국방 무기체계용 핵심 반도체 부품 자립화 플랫폼 개발, 임종원
초록
The device performance deterioration mechanism caused by the total ionizing dose effect after the 款-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO2 gate dielectric layer. The 款-ray radiation hardness according to the gate dielectric layer was also compared between the two different GaN-based MIS-HEMTs. Although HfO2 has exhibited strong tolerance to the total ionizing dose effect in Si-based devices, there is no detail report of the 款-ray radiation effects in GaN-based MIS-HEMTs employing a HfO2 gate dielectric layer. The pulsed-mode stress measurement results and carrier mobility behavior revealed that the device properties not only have direct current (DC) characteristics, but radio frequency (RF) performance has also been mostly degraded by the deterioration of the gate dielectric quality and the trapped charges inside the gate insulator. We also figured out that the immunity to the 款-ray radiation was improved when HfO2 was employed instead of SiN as a gate dielectric layer due to its stronger endurance to the 款-ray irradiation. Our results highlight that the application of a gate insulator that shows superior immunity to the 款-ray irradiation is a crucial factor for the improvement of the total ionizing dose effect in GaN-based MIS-HEMTs.
KSP 제안 키워드
5 nm, Carrier mobility, Deterioration mechanism, Device properties, Direct current(DC), GaN-Based, Gate insulator, High electron mobility transistor(HEMT), Metal-insulator-semiconductor(MIS), Mobility behavior, Radiation Effects
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