상세정보
학술지
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
- 발행일
- 202011
- 출처
- Nanomaterials, v.10 no.11, pp.1-9
- ISSN
- 2079-4991
- 출판사
- MDPI
- 협약과제
- 19VU1700, 국방 무기체계용 핵심 반도체 부품 자립화 플랫폼 개발, 임종원
- 초록
- An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electronmobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al2O3/AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.
- KSP 제안 키워드
- Charging effects, Charging time, Current-Voltage measurements, DC current, Drain voltage, Fluorine ions, Gas reduction, Gate bias stress, High electron mobility transistor(HEMT), Hysteresis phenomenon, I-V measurement
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