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Journal Article
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
- Authors
- Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
- Issue Date
- 2020-11
- Citation
- Nanomaterials, v.10, no.11, pp.1-9
- ISSN
- 2079-4991
- Publisher
- MDPI
- Language
- English
- Type
- Journal Article
- Abstract
- An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electronmobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al2O3/AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.
- KSP Keywords
- Charging effects, Charging time, Current-Voltage measurements, DC current, Drain voltage, Enhancement mode(E-mode), Fluorine ions, Gas reduction, High power device, High-electron mobility transistor(HEMT), I-V measurement
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
