상세정보
학술지
Ferroelectric Switching in Trilayer Al2O3/HfZrOx/Al2O3 Structure
- 발행일
- 202010
- 출처
- Micromachines, v.11 no.10, pp.1-10
- ISSN
- 2072-666X
- 출판사
- MDPI
- 협약과제
- 20VB1100, 인체 열해석 기반 연성열전모듈 설계 및 시스템 패키징 기술 (본과제명:Wearable Device 용 열전발전 시스템 기술 개발) (5차년도), 문승언
- 초록
- Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in which the ferroelectric devices are implemented depends on the specific application, so the process constraints required for device fabrication may be different. In this study, we investigate the ferroelectric characteristics of Zr doped HfO2 layers treated at high temperatures. A single HfZrOx layer deposited by sputtering exhibits polarization switching after annealing at a temperature of 850?뿦 C. However, the achieved ferroelectric properties are vulnerable to voltage stress and higher annealing temperature, resulting in switching instability. Therefore, we introduce an ultrathin 1-nm-thick Al2 O3 layer at both interfaces of the HfZrOx. The trilayer Al2 O3 /HfZrOx /Al2 O3 structure allows switching parameters such as remnant and saturation polarizations to be immune to sweeping voltage and pulse cycling. Our results reveal that the trilayer not only makes the ferroelectric phase involved in the switching free from pinning, but also preserves the phase even at high annealing temperature. Simultaneously, the ferroelectric switching can be improved by preventing leakage charge.
- KSP 제안 키워드
- Annealing temperature, Binary oxide, Ferroelectric characteristics, Ferroelectric devices, Ferroelectric properties, High Temperature, Non-Volatile Memory(NVM), Oxide material, Process constraints, Voltage stress, Zr doped