상세정보
학술지
Optimized Annealing Conditions to Enhance Stability of Polarization in Sputtered HfZrOx Layers for Non-volatile Memory Applications
- 발행일
- 202012
- 출처
- Current Applied Physics, v.20 no.12, pp.1441-1446
- ISSN
- 1567-1739
- 출판사
- Elsevier
- 협약과제
- 20VB1200, 인체 열해석 기반 연성열전모듈 설계 및 시스템 패키징 기술 (본과제명:Wearable Device 용 열전발전 시스템 기술 개발)(4차년도), 문승언
- 초록
- In this paper, we report stable polarization switching in metal-HfZrOx (HZO)-metal capacitors when pulses are repeatedly applied from the initial state. By examining various process parameters including annealing method, annealing temperature, and annealing time, we investigated the optimal conditions for realizing ferroelectricity in HZO layers deposited by sputtering systems. More specifically, we examined how polarization behaviors evolved as a function of annealing temperatures. Our results showed that annealing HZO capped by a top electrode, when annealing temperature was higher than 850 °C, drives the transformation to large quantities of orthorhombic phases, and enables constant remnant polarization without the fluctuations caused by wake-up and fatigue. We continued to observe stable polarization up to 108 cycles with a pulse width of 5 μs.
- KSP 제안 키워드
- Annealing conditions, Annealing temperature, Annealing time, Memory applications, Non-Volatile Memory(NVM), Optimal conditions, Process Parameters, Remnant polarization, initial state, polarization switching, pulse width