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Optimized Annealing Conditions to Enhance Stability of Polarization in Sputtered HfZrOx Layers for Non-volatile Memory Applications
- Authors
- Yeriaron Kim, Jiyong Woo, Solyee Im, Yeseul Lee, Jeong Hun Kim, Jong-Pil Im, Dongwoo Suh, Sang Mo Yang, Sung-Min Yoon, Seung Eon Moon
- Issue Date
- 2020-12
- Citation
- Current Applied Physics, v.20, no.12, pp.1441-1446
- ISSN
- 1567-1739
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we report stable polarization switching in metal-HfZrOx (HZO)-metal capacitors when pulses are repeatedly applied from the initial state. By examining various process parameters including annealing method, annealing temperature, and annealing time, we investigated the optimal conditions for realizing ferroelectricity in HZO layers deposited by sputtering systems. More specifically, we examined how polarization behaviors evolved as a function of annealing temperatures. Our results showed that annealing HZO capped by a top electrode, when annealing temperature was higher than 850 °C, drives the transformation to large quantities of orthorhombic phases, and enables constant remnant polarization without the fluctuations caused by wake-up and fatigue. We continued to observe stable polarization up to 108 cycles with a pulse width of 5 μs.
- KSP Keywords
- Annealing conditions, Annealing temperature, Annealing time, Memory applications, Non-Volatile Memory(NVM), Optimal conditions, Process Parameters, Remnant polarization, initial state, polarization switching, pulse width
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
