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Journal Article Optimized Annealing Conditions to Enhance Stability of Polarization in Sputtered HfZrOx Layers for Non-volatile Memory Applications
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Authors
Yeriaron Kim, Jiyong Woo, Solyee Im, Yeseul Lee, Jeong Hun Kim, Jong-Pil Im, Dongwoo Suh, Sang Mo Yang, Sung-Min Yoon, Seung Eon Moon
Issue Date
2020-12
Citation
Current Applied Physics, v.20, no.12, pp.1441-1446
ISSN
1567-1739
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.cap.2020.09.013
Project Code
20VB1200, Development of thermoelectric power generating system for wearable devices , Moon Seungeon
Abstract
In this paper, we report stable polarization switching in metal-HfZrOx (HZO)-metal capacitors when pulses are repeatedly applied from the initial state. By examining various process parameters including annealing method, annealing temperature, and annealing time, we investigated the optimal conditions for realizing ferroelectricity in HZO layers deposited by sputtering systems. More specifically, we examined how polarization behaviors evolved as a function of annealing temperatures. Our results showed that annealing HZO capped by a top electrode, when annealing temperature was higher than 850 °C, drives the transformation to large quantities of orthorhombic phases, and enables constant remnant polarization without the fluctuations caused by wake-up and fatigue. We continued to observe stable polarization up to 108 cycles with a pulse width of 5 μs.
KSP Keywords
Annealing conditions, Annealing temperature, Annealing time, Memory applications, Non-Volatile Memory(NVM), Optimal conditions, Process Parameters, Remnant polarization, initial state, polarization switching, pulse width
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
CC BY