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학술지 Reactive Sputtering Process for CuIn 1-xGaxSe 2 Thin Film Solar Cells
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저자
박래만, 이호섭, 김제하
발행일
201210
출처
ETRI Journal, v.34 no.5, pp.779-782
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.12.0212.0062
협약과제
11MB3100, 반응성 스퍼터링을 이용한 CIGS 초박막 고효율 태양전지 기술 개발, 김제하
초록
CuIn 1-xGaxSe 2 (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and (In 0.7Ga 0.3) 2Se 3 targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%. © 2012 ETRI.
키워드
Chalcopyrite, Cu(In,Ga)Se (CIGS) 2, Reactive sputtering, Solar cell, Submicron thin film