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학술지 Reactive Sputtering Process for CuIn 1-xGaxSe 2 Thin Film Solar Cells
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저자
박래만, 이호섭, 김제하
발행일
201210
출처
ETRI Journal, v.34 no.5, pp.779-782
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.12.0212.0062
협약과제
11MB3100, 반응성 스퍼터링을 이용한 CIGS 초박막 고효율 태양전지 기술 개발, 김제하
초록
CuIn 1-xGaxSe 2 (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and (In 0.7Ga 0.3) 2Se 3 targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%. © 2012 ETRI.
키워드
Chalcopyrite, Cu(In,Ga)Se (CIGS) 2, Reactive sputtering, Solar cell, Submicron thin film
KSP 제안 키워드
CIGS film, Composition ratio, Conversion efficiency(C.E.), Crystal grain size, Film composition, Plasma power, Reactive sputtering process, Soda lime glass(SLG), Thin film solar cells, crystal orientation, power conversion efficiency