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Conference Paper 30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge
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Authors
Jeho Na, Hyung-Seok Lee, Chi-Hoon Jun, Hyun-Gyu Jang, Zin-Sig Kim, Sang Choon Ko, Woojin Chang, Jae Kyoung Mun, Eun Soo Nam
Issue Date
2020-11
Citation
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2020, pp.1-1
Language
English
Type
Conference Paper
KSP Keywords
900 V, AlGaN/GaN-on-Si, schottky barrier diode(SBD)