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0V 턴 오프 MOS Controlled Thyristor 소자 구조 설계 및 전압전류특성 시뮬레이션
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- Issue Date
- 2020-11
- Citation
- 대한전자공학회 학술 대회 (추계) 2020, pp.157-160
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- Current driving capability is one of the important specifications in MCT (MOS Controlled Thyristor) which is determined by turn-off characteristics. Meanwhile, high peak anode current and di/dt are related to the turn-on characteristics. Thus, both on-FET and off-FET performance need to be improved. In this paper, the structure of MCT with the off-FET which is turned on at the gate voltage of 0V by forming a “depletion mode off-FET channel region” in a part of the off-FET channel region of the unit cell of an MCT device is presented. The MCT is turned on at an arbitrary gate voltage and turned off at a gate voltage of 0V with adjusting the ion implantation condition. This demonstrates that the turn-on and turn-off characteristics of the MCT are enhanced and can be simplify the gate driving circuit.
- KSP Keywords
- Gate driving circuit, Gate voltage, Ion Implantation, Turn-off characteristics, Turn-on characteristics, Unit cell, anode current, depletion-mode, driving capability