상세정보
학술지
Study of oxygen plasma induced modulation of photoconductivity in MoS2 field effect transistor
- 저자
- Muhammad Atif Khan, Servin Rathi, 윤선진, 김길호
- 발행일
- 202006
- 출처
- Superlattices and Microstructures, v.142, pp.1-6
- ISSN
- 0749-6036
- 출판사
- Elsevier
- 협약과제
- 19HB1100, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
- 초록
- We studied the effect of oxygen plasma treatment on the drain current and photoconductivity of the two dimensional few-layers MoS2 based field-effect transistors (FETs). It was observed that the oxygen plasma can reduce the photoconductivity of MoS2 channel along with variation in the current characteristics. This study shows the contribution of mild oxygen plasma to modulate the photoconductivity of the MoS2 FETs which can have potential in optoelectronic detectors and sensors applications.
- KSP 제안 키워드
- Current characteristics, Drain current, Effect of oxygen, Field-effect transistors(FETs), oxygen plasma treatment, two-dimensional(2D)