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Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
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- Authors
- Hang Kang, Sun Jin Yun, Kwang Hoon Jung, Jung Wook Lim
- Issue Date
- 2020-10
- Citation
- Applied Surface Science, v.528, pp.1-8
- ISSN
- 0169-4332
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated superior electrical and optical characteristics and are expected to replace silicon in semiconductor materials. However, in practice the use of TMDCs remains a challenge due to the lack of a suitable method for the large-scale synthesis of TMDCs. Herein we demonstrated a multi-wafer-scale growth method to obtain very uniform and continuous 2D WSe2 films by combining the selenization of the W metal using thermally cracked Se molecules, a metal-agglomeration-suppressed growth technique, and a traveling flow-type reactor. The usefulness of the traveling flow reactor must be attributed to the self-saturated selenization of a very thin W metal precursor film on a large-area substrate. The number of 2D WSe2 layers was easily controlled by varying the thickness of the W precursor. Raman scattering and thickness measurements showed that WSe2 films grew uniformly on three 4-inch Si wafers at once, at both 530 and 600 °C. The average Hall mobility and carrier concentration of 6-nm-thick p-type WSe2 films on the three wafers were 22.8 cm2 V?닋1 s?닋1 and 3.69 × 1016 cm?닋3, respectively. The field effect (FE) transistor with the 6-nm WSe2 channel and SiO2 back gate insulator also showed p-type transfer characteristics. The formation of a WSe2/MoSe2 vertical heterostructure also demonstrated the usefulness of the method proposed herein.
- KSP Keywords
- Back gate, Carrier concentration, Electrical and optical characteristics, Growth method, Hall Mobility, Metal precursor, Multi-wafer, Precursor film, Raman Scattering, Semiconductor materials, Si wafer