상세정보
학술지
Multi-wafer-scale Growth of WSe2 Films using a Traveling Flow-type Reactor with a Remote Thermal Se Cracker
- 발행일
- 202010
- 출처
- Applied Surface Science, v.528, pp.1-8
- ISSN
- 0169-4332
- 출판사
- Elsevier
- 협약과제
- 19HB1100, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
- 초록
- Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated superior electrical and optical characteristics and are expected to replace silicon in semiconductor materials. However, in practice the use of TMDCs remains a challenge due to the lack of a suitable method for the large-scale synthesis of TMDCs. Herein we demonstrated a multi-wafer-scale growth method to obtain very uniform and continuous 2D WSe2 films by combining the selenization of the W metal using thermally cracked Se molecules, a metal-agglomeration-suppressed growth technique, and a traveling flow-type reactor. The usefulness of the traveling flow reactor must be attributed to the self-saturated selenization of a very thin W metal precursor film on a large-area substrate. The number of 2D WSe2 layers was easily controlled by varying the thickness of the W precursor. Raman scattering and thickness measurements showed that WSe2 films grew uniformly on three 4-inch Si wafers at once, at both 530 and 600 °C. The average Hall mobility and carrier concentration of 6-nm-thick p-type WSe2 films on the three wafers were 22.8 cm2 V?닋1 s?닋1 and 3.69 × 1016 cm?닋3, respectively. The field effect (FE) transistor with the 6-nm WSe2 channel and SiO2 back gate insulator also showed p-type transfer characteristics. The formation of a WSe2/MoSe2 vertical heterostructure also demonstrated the usefulness of the method proposed herein.
- KSP 제안 키워드
- Carrier concentration, Electrical and optical characteristics, Flow reactor, Gate insulator, Growth method, Hall mobility, Metal precursor, Multi-wafer, Precursor film, Raman scattering(SERS), Semiconductor materials