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Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors
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- Authors
- Jisu Jang, Yunseob Kim, Sang-Soo Chee, Hanul Kim, Dongmok Whang, Gil-Ho Kim, Sun Jin Yun
- Issue Date
- 2020-01
- Citation
- ACS Applied Materials & Interfaces, v.12, no.4, pp.5031-5039
- ISSN
- 1944-8244
- Publisher
- American Chemical Society (ACS)
- Language
- English
- Type
- Journal Article
- Abstract
- Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising materials for next-generation electronics due to their excellent semiconducting properties. However, high contact resistance at the metal-TMDC interface plagues the realization of high-performance devices. Here, an effective metal-interlayer-semiconductor (MIS) contact is demonstrated, wherein an ultrathin ZnO interlayer is inserted between the metal electrode and MoS2, providing damage-free and clean interfaces at electrical contacts. Using TEM imaging, we show that the contact interfaces were atomically clean without any apparent damages. Compared to conventional Ti/MoS2 contacts, the MoS2 devices with a Ti/ZnO/MoS2 contact exhibit a very low contact resistance of 0.9 k?? μm. These improvements are attributed to the following mechanisms: (a) Fermi-level depinning at the metal/MoS2 interface by reducing interface disorder and (b) presence of interface dipole at the metal/ZnO interface, consequently reducing the Schottky barrier and contact resistance. Further, the contact resistivity of a Ti/ZnO/MoS2 contact is insensitive to the variation of ZnO thickness, which facilitates large-scale production. Our work not only elucidates the underlying mechanisms for the operation of the MIS contact but also provides a simple and damage-free strategy for conventional aggressive metal deposition that is potentially useful for the realization of large-scale 2D electronics with low-resistance contacts.
- KSP Keywords
- Contact resistance(73.40.Cg), Fermi-level depinning, High performance, Interface contact, Large-scale production, Low contact resistance, MIS contact, Next-generation, Schottky barrier, Semiconducting properties, ZnO thickness