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Atmospheric Vapor-transport Method for Growth of VO2 Single-crystalline Nano- and Microwires
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- Authors
- Jin Chul Cho, Tetiana Slusar, Jun-Hwan Shin, Bong Jun Kim, Hyun-Tak Kim
- Issue Date
- 2021-01
- Citation
- Journal of the Korean Physical Society, v.78, no.1, pp.6-10
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- The growth of high-quality single crystalline nano- and microwires of VO2 is necessary to study the Mott transition and to expand its applications. Here, we propose a modified vapor-transport method characterized by a one-step process that does not require a vacuum and can be performed at the atmospheric pressure conditions with a nitrogen gas flow. This, so called atmospheric vapor-transport (AVT) method, is simpler in terms of the growth procedure and the apparatus installation when compared to the widely used vacuum-based techniques. The crystalline wires obtained by AVT method show a sharp and large, up to five orders, change in the electrical resistance near TC혻≈혻340혻K, along with the M1?밠2?밨 structural phase transition.
- KSP Keywords
- Electrical Resistance, Gas flow, High-quality, Mott transition, Nano-, Single-crystalline, Transport method, atmospheric pressure, nitrogen gas, one-step process, structural phase transition