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학술지 Growth and Device Properties of ALD Deposited ZnO Films for CIGS Solar Cells
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저자
Vinaya Kumar Arepalli, 이우정, 정용덕, 김제하
발행일
202101
출처
Materials Science in Semiconductor Processing, v.121, pp.1-8
ISSN
1369-8001
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.mssp.2020.105406
초록
We report the structural, optical, and electrical properties of an atomic layer deposited ZnO thin films in the temperature range of 80??180 °C. Also, the device characteristics of the CIGS solar cells with the ALD-ZnO buffer layers were investigated. The thickness and grain sizes of the ZnO were increased with an increase of temperature. All ZnO films exhibited the preferred crystal orientation along the (100) plane except the films grown at 80 °C showed along the (002) plane. The optical energy band gap of the ZnO was decreased from 3.30 to 3.29 eV with an increase of temperature. The electrical resistivity decreased from 6.2 to 5.6 × 10-3 廓 cm, while the mobility and the carrier concentrations increased from 1.7 to 21.6 cm2/V.s and from 6.0 × 1018 to 2.0 × 1020 cm?닋3, respectively. The fabricated CIGS solar cells using a 70 nm-thick ZnO film deposited at 100 °C, exhibited the best device characteristics of the FF, Jsc, and PCE as 63.48%, 28.84 mA/cm2, and 8.59%, respectively.
키워드
ALD method, CIGS absorber, I-ZnO layer, Thin film solar cells
KSP 제안 키워드
ALD method, CIGS absorber, CIGS solar cell, Carrier concentration, Device characteristics, Device properties, Grain size, Optical energy band gap, Preferred crystal orientation, Temperature range, Thin film solar cells