BROWSE
Detail
Journal Article
Growth and Device Properties of ALD Deposited ZnO Films for CIGS Solar Cells
Cited 15 time in 
Share 
Share
- Authors
- Vinaya Kumar Arepalli, Woo-Jung Lee, Yong-Duck Chung, Jeha Kim
- Issue Date
- 2021-01
- Citation
- Materials Science in Semiconductor Processing, v.121, pp.1-8
- ISSN
- 1369-8001
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We report the structural, optical, and electrical properties of an atomic layer deposited ZnO thin films in the temperature range of 80??180 °C. Also, the device characteristics of the CIGS solar cells with the ALD-ZnO buffer layers were investigated. The thickness and grain sizes of the ZnO were increased with an increase of temperature. All ZnO films exhibited the preferred crystal orientation along the (100) plane except the films grown at 80 °C showed along the (002) plane. The optical energy band gap of the ZnO was decreased from 3.30 to 3.29 eV with an increase of temperature. The electrical resistivity decreased from 6.2 to 5.6 × 10-3 廓 cm, while the mobility and the carrier concentrations increased from 1.7 to 21.6 cm2/V.s and from 6.0 × 1018 to 2.0 × 1020 cm?닋3, respectively. The fabricated CIGS solar cells using a 70 nm-thick ZnO film deposited at 100 °C, exhibited the best device characteristics of the FF, Jsc, and PCE as 63.48%, 28.84 mA/cm2, and 8.59%, respectively.
- KSP Keywords
- CIGS solar cell, Carrier concentration, Device characteristics, Device properties, Electrical properties, Grain Size, Optical energy band gap, Preferred crystal orientation, Temperature range, ZnO buffer layer, ZnO films