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Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
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- Authors
- Zin-Sig Kim, Hyung-Seok Lee, Sung-Bum Bae, Hokyun Ahn, Sang-Heung Lee, Jong-Won Lim, Dong Min Kang
- Issue Date
- 2021-08
- Citation
- Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- Devices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Presently, the substrates widely distributed are AlGaN/GaN on SiC for its high performance in radio frequency (RF) applications, for examples high cutoff frequency (fT) or high maximum oscillation frequency (fmax), and AlGaN/GaN on Si for its high power performance, for examples high breakdown voltage or high voltage operation. Chemical vapor deposition (CVD) diamond substrates have a thermal conductivity of 12 W/cm·K, and this is a remarkable point because HEMTs or SBDs on AlGaN/GaN on CVD diamonds are one of the promising alternatives for power and RF applications. In comparison, the thermal conductivity of AlGaN/GaN on a sapphire substrate is 0.33 W/cm·K while that of AlGaN/GaN on a Si substrate is 1.3 W/cm·K and that of AlGaN/GaN on a SiC substrate is 4.9 W/cm·K. In this work, we fabricated SBDs with a 137 mm Schottky channel length on AlGaN/GaN on Si and also on a CVD diamond substrate. We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.
- KSP Keywords
- 7 mm, AlGaN/GaN heterostructure, AlGaN/GaN-on-Si, Breakdown voltage(BDV), Channel Length, Chemical Vapor Deposition, Cvd diamond, GaN on SiC, GaN-Based, High Frequency(HF), High electron mobility transistor(HEMT)