상세정보
학술지
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
- 발행일
- 202007
- 출처
- Journal of Nanoscience and Nanotechnology, v.20 no.7, pp.4170-4175
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 협약과제
- 19ZB1100, 3D Photo-Electronics 원천기술 개발, 백용순
- KSP 제안 키워드
- AlGaN/GaN heterostructure, Field effect transistors(Substrate temperature), Normally-Off, recess depth