상세정보
학술지
Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se2 Thin Films
- 발행일
- 202104
- 출처
- Crystals, v.11 no.4, pp.1-6
- ISSN
- 2073-4352
- 출판사
- MDPI
- 협약과제
- 20JB1900, 무독성 버퍼층을 갖는 다색 플렉서블 박막 태양전지 기술 개발, 정용덕
- 초록
- We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier?밹arrier scattering lifetimes and decrease the bandgap transition lifetime.
- KSP 제안 키워드
- Ar ions, CIGS film, Ion implantation, THz emission, THz radiation, Ultrafast carrier dynamics, band gap transition, current density, ion-implanted, optical pump, surge current
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