상세정보
학술지
Optimizing Oxide Mixing Ratio for Achieving Energy-Efficient Oxide Thin-Film Transistors
- 발행일
- 202108
- 출처
- Physica Status Solidi (A) - Applications and Materials Science, v.218 no.16, pp.1-5
- ISSN
- 1862-6300
- 출판사
- Wiley
- 협약과제
- 21JB2600, 저온 공정 산화물 반도체 기반 초저전력 단일3차원 집적 로직 소자 및 아키텍쳐 개발, 조성행
- 초록
- With an atomic layer deposition (ALD) method, mixed oxide thin films can be formed. This feature allows to experimentally deduce the mixing ratio of oxide components, which yields optimal device properties. Herein, all-oxide bottom-gate thin-film transistors (TFTs) having binary ZnOx?밒nOy channel are fabricated. To find composition, which yields energy-efficient TFTs of low subthreshold swing (SS) characteristics, mixed oxide channels of ZnOx and InOy are prepared, using a plasma-enhanced ALD method and liquid precursors of diethyl zinc and 3-(dimethylamino)propyl-dimethyl indium. Channel comprised of ZnOx:InOy = 1:2 exhibits the best transfer characteristics with a highest field effect mobility and a lowest SS of 30.3 cm2 V s?닋1 and 0.14 V dec?닋1, respectively. The variation on SS is discussed quantitatively in terms of channel depletion and the quantitative description on oxygen vacancy.
- KSP 제안 키워드
- ALD method, Atomic Layer Deposition, Bottom gate, Device properties, Liquid precursor, Mixed oxides, Mixing ratio, Oxygen vacancies, Quantitative description, Thin-Film Transistor(TFT), all-oxide