Journal Article
Ultrafast Room Temperature Synthesis of Porous Polythiophene via Atmospheric Pressure Plasma Polymerization Technique and Its Application to NO2 Gas Sensors
New nanostructured conducting porous polythiophene (PTh) films are directly deposited on substrates at room temperature (RT) by novel atmospheric pressure plasma jets (APPJs) polymerization technique. The proposed plasma polymerization synthesis technique can grow the PTh films with a very fast deposition rate of about 7.0 μm쨌min?닋1 by improving the sufficient nucle-ation and fragment of the thiophene monomer. This study also compares pure and iodine (I2)-doped PTh films to demonstrate the effects of I2 doping. To check the feasibility as a sensing material, NO2-sensing properties of the I2-doped PTh films-based gas sensors are also investigated. As a result, the proposed APPJs device can produce the high density, porous and ultra-fast polymer films, and pol-ymers-based gas sensors have high sensitivity to NO2 at RT. Our approach enabled a series of pro-cesses from synthesis of sensing materials to fabrication of gas sensors to be carried out simultane-ously.
KSP Keywords
Atmospheric pressure plasma polymerization, Fast deposition, High Sensitivity, High-density, Polymer films, Room temperature synthesis, Sensing material, Sensitivity to, Synthesis technique, atmospheric pressure plasma jet, deposition rate
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
Copyright Policy
ETRI KSP Copyright Policy
The materials provided on this website are subject to copyrights owned by ETRI and protected by the Copyright Act. Any reproduction, modification, or distribution, in whole or in part, requires the prior explicit approval of ETRI. However, under Article 24.2 of the Copyright Act, the materials may be freely used provided the user complies with the following terms:
The materials to be used must have attached a Korea Open Government License (KOGL) Type 4 symbol, which is similar to CC-BY-NC-ND (Creative Commons Attribution Non-Commercial No Derivatives License). Users are free to use the materials only for non-commercial purposes, provided that original works are properly cited and that no alterations, modifications, or changes to such works is made. This website may contain materials for which ETRI does not hold full copyright or for which ETRI shares copyright in conjunction with other third parties. Without explicit permission, any use of such materials without KOGL indication is strictly prohibited and will constitute an infringement of the copyright of ETRI or of the relevant copyright holders.
J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
If you have any questions or concerns about these terms of use, or if you would like to request permission to use any material on this website, please feel free to contact us
KOGL Type 4:(Source Indication + Commercial Use Prohibition+Change Prohibition)
Contact ETRI, Research Information Service Section
Privacy Policy
ETRI KSP Privacy Policy
ETRI does not collect personal information from external users who access our Knowledge Sharing Platform (KSP). Unathorized automated collection of researcher information from our platform without ETRI's consent is strictly prohibited.
[Researcher Information Disclosure] ETRI publicly shares specific researcher information related to research outcomes, including the researcher's name, department, work email, and work phone number.
※ ETRI does not share employee photographs with external users without the explicit consent of the researcher. If a researcher provides consent, their photograph may be displayed on the KSP.