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Conference Paper
Analysis for Dynamic Characteristics of Metal-Oxide-Semiconductor (MOS) Controlled Thyristor (MCT) Depending on Snap-Back Effect
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- Authors
- Hyun Gyu Jang, Dong Yun Jung, Sungkyu Kwon, Doohyung Cho, Jong Il Won, Seong Hyun Lee, Kun Sik Park, Jong-Won Lim
- Issue Date
- 2021-06
- Citation
- International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2021, pp.487-489
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, we present the dynamic characteristics of MCT depending on the snap-back effect. To compare the dynamic characteristics by the snap-back effect, MCT with and without snap-back were designed and fabricated. Furthermore, the design method of the test circuit to measure the dynamic characteristics of MCT is introduced. From the measured results, it is confirmed that the peak current and current rise rate are decreased as the snap-back effect is increased. Also, it can be seen that the delay time is increased as the snap-back effect is increased.
- KSP Keywords
- Delay Time, Design method, Dynamic characteristics, Metal-oxide(MOX), Peak Current, Rise rate, Test Circuit, metal oxide semiconductor, snap-back