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Conference Paper
GaN HEMT 대면적 소자 모델링을 위한 DC 바이어스 조건에 따른 게이트 채널 위치별 발생 온도 특성 분석
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- Issue Date
- 2021-07
- Citation
- 대한전자공학회 학술 대회 (하계) 2021, pp.315-319
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- This paper presents the temperature distribution analysis of gate channels of GaN large-sized HEMT for different DC bias conditions by using an infrared microthermal measurement system. It is analyzed that the temperature difference between locations of the gate channels at high power is significant, and the results of the measurement and analysis need to be considered in designing or modeling high-power active devices.
- KSP Keywords
- Active devices, GaN HEMT, High power, Measurement and analysis, Temperature distribution, dc bias, distribution analysis, measurement system, temperature difference