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Enhanced Interfacial Reaction of Silicon Carbide Fillers onto the Metal Substrate in Carbon Nanotube Paste for Reliable Field Electron Emitters
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- Authors
- Eunsol Go, Jae-Woo Kim, Jeong-Woong Lee, Yujung Ahn, Jin-Woo Jeong, Jun-Tae Kang, Sora Park, Ki Nam Yun, Seong Jun Kim, Sunghee Kim, Ji-Hwan Yeon, Yoon-Ho Song
- Issue Date
- 2021-05
- Citation
- Nanotechnology, v.32, no.19, pp.1-8
- ISSN
- 0957-4484
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Adhesion of carbon nanotube (CNT) onto a cathode substrate is very crucial for field electron emitters that are operating under high electric fields. As a supporting precursor of CNT field emitters, we adopted silicon carbide (SiC) nano-particle fillers with Ni particles and then enhanced interfacial reactions onto Kovar-alloy substrates through the optimized wet pulverization process of SiC aggregates for reliable field electron emitters. As-purchased SiC aggregates were efficiently pulverized from 20 to less than 1 micro-meter in a median value (D50). CNT pastes for field emitters were distinctively formulated by a mixing process of the pulverized SiC aggregates and pre-dispersed CNTs. X-ray photoelectron spectroscopy studies showed that the optimally pulverized SiC-CNT paste-emitter had a stronger Si 2p3/2 signal in the Ni2Si phase than the as-purchased one. The Si 2p3/2 signal would represent interfacial reaction of the SiC nano-particle onto Ni from the CNT paste and the Kovar substrate, forming the supporting layer for CNT emitters. The optimal paste-emitter even in a vacuum-sealed tube exhibited a highly reliable field emission current with a high current density of 100 mA cm?닋2 for over 50 h along with good reproducibility. The enhanced interfacial reaction of SiC filler onto the metal substrates could lead to highly reliable field electron emitters for vacuum electronic devices.
- KSP Keywords
- Alloy substrate, CNT paste, Carbon nano-tube(CNT), Cathode substrate, Field electron emitters, High Current Density, Interfacial reaction, Mixing process, Ni particles, Si 2p, Si Phase