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Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors
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- Authors
- Chihun Sung, Sooji Nam, and Sung Haeng Cho
- Issue Date
- 2021-09
- Citation
- IEEE Electron Device Letters, v.42, no.9, pp.1327-1330
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- In this work, we present a new fabrication methodology to enable high-performance thin-film transistor (TFT) with submicron channel length. The method can exceed the resolution limit of a conventional photolithography compatible with large-area substrates such as a glass or a plastic. The lift-off and back-channel etching techniques were employed to delineate the channel in the bottom-gate top-contact configuration. The Al-doped InZnSnO TFTs with 0.8 μm channel length were successfully fabricated. Field-effect mobility of over 50 cm2/Vs, subthreshold swing of 90 mV/dec, on/off current ratio of > 1010, and turn-on voltage of -0.24 V were obtained. Considering the compatibility with the current manufacturing process and facility, we expect that the method can be incorporated in an easy and cost-effective way into the TFT array for high-performance large-area electronics.
- KSP Keywords
- Al-doped, Back-channel etching, Bottom gate, Channel Length, Contact configuration, High performance, Large-area electronics, Manufacturing processes, Metal-oxide(MOX), Resolution limit, TFT array