상세정보
학술지
Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors
- 발행일
- 202109
- 출처
- IEEE Electron Device Letters, v.42 no.9, pp.1327-1330
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 21JB2600, 저온 공정 산화물 반도체 기반 초저전력 단일3차원 집적 로직 소자 및 아키텍쳐 개발, 조성행
- 초록
- In this work, we present a new fabrication methodology to enable high-performance thin-film transistor (TFT) with submicron channel length. The method can exceed the resolution limit of a conventional photolithography compatible with large-area substrates such as a glass or a plastic. The lift-off and back-channel etching techniques were employed to delineate the channel in the bottom-gate top-contact configuration. The Al-doped InZnSnO TFTs with 0.8 μm channel length were successfully fabricated. Field-effect mobility of over 50 cm2/Vs, subthreshold swing of 90 mV/dec, on/off current ratio of > 1010, and turn-on voltage of -0.24 V were obtained. Considering the compatibility with the current manufacturing process and facility, we expect that the method can be incorporated in an easy and cost-effective way into the TFT array for high-performance large-area electronics.
- KSP 제안 키워드
- Al-doped, Back-channel etching, Bottom gate, Channel Length, Contact configuration, High performance, Manufacturing processes, Metal-oxide(MOX), ON/OFF current ratio, Resolution limit, TFT array