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Journal Article
신개념 스위칭 소자를 위한 모트- 절연체 금속 전이 기술
- Issue Date
- 2021-06
- Citation
- 전자통신동향분석, v.36, no.3, pp.34-40
- ISSN
- 1225-6455
- Publisher
- 한국전자통신연구원
- Language
- Korean
- Type
- Journal Article
- Abstract
- For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the negative differential resistance (NDR)-IMT switching generated at constant current, and the NDR-based IMT-oscillation. Moreover, the possibilities of new concept IMT switching devices are briefly explained.
- KSP Keywords
- Constant current(CC), Electric Field, Mott insulator, Negative differential resistance, Switching devices, insulator-metal transition, semiconductor device
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
