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Journal Article
Simulation and Fabrication Studies of Semi-SuperJunction Trench Power MOSFETs by RSO Process with Silicon Nitride Layer
- Authors
- Kyoung Il Na, Sang Gi Kim, Jin Gun Koo, Jong Dae Kim, Yil Suk Yang, Jin Ho Lee
- Issue Date
- 2012-12
- Citation
- ETRI Journal, v.34, no.6, pp.962-965
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer (SiO2) of a conventional device is replaced by a multilayered insulator (SiO 2/SiNx/TEOS) to improve the process and electrical properties. To compare the electrical properties of the conventional RSO TDMOS to those of the proposed TDMOS, that is, the nitride-RSO TDMOS, simulation studies are performed using a TCAD simulator. The nitride-RSO TDMOS has superior properties compared to those of the RSO TDMOS, in terms of drain current and on-resistance, owing to a high nitride permittivity. Moreover, variations in the electrical properties of the nitride-RSO TDMOS are investigated using various devices, pitch sizes, and thicknesses of the insulator. Along with an increase of the device pitch size and the thickness of the insulator, the breakdown voltage slowly improves due to a vertical field plate effect; however, the drain current and on-resistance degenerate, owing to a shrinking of the drift width. The nitride-RSO TDMOS is successfully fabricated, and the blocking voltage and specific on-resistance are 108 V and 1.1 m廓cm2, respectively. © 2012 ETRI.
- KSP Keywords
- Blocking voltage, Breakdown voltage(BDV), Drain current, Field Plate, Insulation layer, Nitride layer, SiO 2, Silicon Nitride, Simulation study, electrical properties(I-V curve), simulation and fabrication