상세정보
학술지
The Potassium-Assisted P-Type Characteristics of Tin Oxide in Solution-Processed High-Performance Metal Oxide Thin-Film Transistors
- 발행일
- 202109
- 출처
- Physica Status Solidi (A) - Applications and Materials Science, v.218 no.18, pp.1-7
- ISSN
- 1862-6300
- 출판사
- Wiley
- 협약과제
- 21JB2600, 저온 공정 산화물 반도체 기반 초저전력 단일3차원 집적 로직 소자 및 아키텍쳐 개발, 조성행
- 초록
- Developing high-performance p-type metal-oxide semiconductors comparable to n-type ones has opened a new window for the realization of transparent, flexible, and low-power integrated circuits in large-area electronics. Herein, the fabrication of solution-processed p-type metal-oxide thin-film transistors (TFTs) with excellent device performance at low temperatures using a novel material is reported. Potassium (K) content is introduced into the tin oxide precursor solution to stabilize the tin (II) oxide (SnO) phase rather than the tin (IV) oxide (SnO2) phase during thin-film formation. The optimized K-doped SnO (K-SnO) TFTs exhibit outstanding electrical performance, with a maximum Hall mobility of 51 cm2 V?닋1 s?닋1 and a field-effect hole mobility of 2.3 cm2 V?닋1 s?닋1. The achievement of the solution-processed K-SnO TFTs not only provides a significant step toward the development of complementary metal-oxide semiconductor circuits, but also represents a feasible approach for low-cost flexible p-type metal-oxide electronics.
- KSP 제안 키워드
- Complementary metal-oxide-semiconductor(CMOS), Hall mobility, High performance, Hole mobility, K-doped, Low temperature(LT), Low-Power, Low-cost, Metal-oxide(MOX), N-type, Novel material