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학술지 Synergetic Contribution of Fluorinated Azide for High EQE and Operational Stability of Top-illuminated, Semitransparent, Photomultiplication-type Organic Photodiodes
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저자
김주희, 주철웅, Syed Zahid Hassan, 유승훈, 강민균, 피재은, 강승열, 박영삼, 정대성
발행일
202111
출처
Materials Horizons, v.8 no.11, pp.3141-3148
ISSN
2051-6347
출판사
Royal Society of Chemistry (RSC)
DOI
https://dx.doi.org/10.1039/d1mh01368h
협약과제
21HB3100, 500ppi급 지문인식 센서를 위한 유기포토다이오드 핵심기술 개발, 박영삼
초록
In this study, it is shown that fluorinated azide, employed as a functional additive to photomultiplication-type organic photodiodes (PM-OPDs), can not only enhance the operational stability by freezing the morphology consisting of matrix polymer/localized acceptor but also stabilize the trapped electron states such that the photomultiplication mechanism can be accelerated further, leading to exceptionally high external quantum efficiency (EQE). The consequent semitransparent OPD consisting of molybdenum oxide (MoO3)/Au/MoO3/photoactive layer/polyethyleneimine ethoxylated/indium tin oxide (ITO) rendered a maximum EQE of over 500 000% and 370 000% under bottom and top illumination, respectively. Owing to the remarkably high EQE, high specific detectivity of 5.6 × 1013 Jones and low noise-equivalent power of 5.35 × 10-15 W Hz-0.5 were also demonstrated. Furthermore, the OPD demonstrated stable performance during 20 h of continuous operation and minimal performance degradation even after the damp heat test. To fully visualize the advantages of the proposed high-EQE, top-illuminated, semitransparent OPD with spectral asymmetry between absorption and detection, a reflection-type fingerprint platform consisting of 1 OPD-1 oxide field-effect transistor complementary metal-oxide-semiconductor backplane (300 ppi) is designed and fabricated. The successful recognition of the fingerprint of one of the authors is demonstrated, which indicates the feasibility of the proposed PM-OPD for sensing weak light intensity.
KSP 제안 키워드
Complementary metal-oxide-semiconductor(CMOS), Continuous operation, Damp heat test, Equivalent power, Field-effect transistors(FETs), Low noise, Metal-oxide(MOX), Molybdenum Oxide, Operational stability, Oxide field, Photoactive layer