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Conference Paper
Analysis of Temperature Characteristics of Gate Channels by DC Bias Conditions for Large-Size GaN FET Modeling
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- Authors
- Woojin Chang, Dong-Min Kang, Sang-Hun Lee
- Issue Date
- 2021-11
- Citation
- International Conference on Consumer Electronics (ICCE) 2021 : Asia, pp.398-392
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper presents the temperature distribution analysis of gate channels of large-size GaN FET for different DC bias conditions by using an infrared microthermal measurement system. It is analyzed that the temperature difference between locations of the gate channels at high power is significant, and the results of the measurement and analysis need to be considered in designing or modeling high-power active devices.
- KSP Keywords
- Active devices, GaN FET, High power, Measurement and analysis, Temperature Distribution, dc bias, distribution analysis, large size, measurement system, temperature characteristics, temperature difference