상세정보
학술대회
Analysis of Temperature Characteristics of Gate Channels by DC Bias Conditions for Large-Size GaN FET Modeling
- 발행일
- 202111
- 출처
- International Conference on Consumer Electronics (ICCE) 2021 : Asia, pp.398-392
- 협약과제
- 21HB3200, 5G 통신을 위한 3.7GHz 300W급 고출력 GaN 파워트랜지스터 기술 및 전력증폭기 개발, 장우진
- 초록
- This paper presents the temperature distribution analysis of gate channels of large-size GaN FET for different DC bias conditions by using an infrared microthermal measurement system. It is analyzed that the temperature difference between locations of the gate channels at high power is significant, and the results of the measurement and analysis need to be considered in designing or modeling high-power active devices.
- KSP 제안 키워드
- Active devices, GaN FET, High power, Measurement and analysis, Temperature Distribution, dc bias, distribution analysis, large size, measurement system, temperature characteristics, temperature difference