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Journal Article
Highly Reliable THz Hermetic Detector based on InGaAs/InP Schottky Barrier Diode
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- Authors
- Jun-Hwan Shin, Dong Woo Park, Eui Su Lee, Mugeon Kim, Dong Hun Lee, Il-Min Lee, Kyung Hyun Park
- Issue Date
- 2021-06
- Citation
- Infrared Physics and Technology, v.115, pp.1-5
- ISSN
- 1350-4495
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate on n-InGaAs/n+-InP hetero-epitaxial structure based low-barrier Schottky barrier diode with integrated antenna for broadband THz detection. These devices showed refined and uniform nonlinear rectifying characteristics. Based on this device, a compact and robust hermetic packaged module was fabricated. The developed module showed stable and consistent electrical characteristics even in mechanical/vibration shock and abrupt change of temperature. The detection performance of module was characterized by frequency domain spectroscopy system, and as a result, it had a detectable bandwidth of 0.1??0.8 THz, a voltage responsivity of 320 V/W, and noise equivalent power of 3.1?닕10?닋9 W/Hz0.5 at 300 GHz.
- KSP Keywords
- 300 GHz, Abrupt change, Change of temperature, Electrical characteristics, Epitaxial structure, Frequency domain(FD), Frequency domain spectroscopy, Hetero-epitaxial, Integrated Antenna, Noise Equivalent Power, THz detection