상세정보
학술지
Highly Reliable THz Hermetic Detector based on InGaAs/InP Schottky Barrier Diode
- 발행일
- 202106
- 출처
- Infrared Physics and Technology, v.115, pp.1-5
- ISSN
- 1350-4495
- 출판사
- Elsevier
- 협약과제
- 21ZH1100, 연결의 한계를 극복하는 초연결 입체통신 기술 연구, 박승근
- 초록
- We demonstrate on n-InGaAs/n+-InP hetero-epitaxial structure based low-barrier Schottky barrier diode with integrated antenna for broadband THz detection. These devices showed refined and uniform nonlinear rectifying characteristics. Based on this device, a compact and robust hermetic packaged module was fabricated. The developed module showed stable and consistent electrical characteristics even in mechanical/vibration shock and abrupt change of temperature. The detection performance of module was characterized by frequency domain spectroscopy system, and as a result, it had a detectable bandwidth of 0.1??0.8 THz, a voltage responsivity of 320 V/W, and noise equivalent power of 3.1?닕10?닋9 W/Hz0.5 at 300 GHz.
- KSP 제안 키워드
- 300 GHz, Abrupt change, Change of temperature, Epitaxial structure, Frequency Domain Spectroscopy(FDS), Rectifying characteristics, THz detection, Vibration shock, Voltage responsivity, detection performance, electrical characteristics