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질화갈륨 기반 고 전자이동도 트렌지스터에서 조사된 양성자의 세기에 따른 문턱전압 변화 메커니즘 연구
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- Issue Date
- 2021-07
- Citation
- 대한전자공학회 학술 대회 (하계) 2021, pp.93-96
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- In this study, we have revealed the threshold voltage shift mechanism corresponding to the proton radiation energy in GaN-based metal-insulator-semiconductor(MIS) high-electron mobility transistors(HEMTs). The MIS-HEMTs for 5 nm-thick SiN and HfO₂ gate insulator were fabricated. After the device processing, the γ-ray and proton were radiated for various irradiation conditions. Through the detailed electrical device characterization before and after the radiation, we figured out that the threshold voltage shift was determined by the competition between the total ionizing does effects and displacement damages, mainly generated inside of the gate insulator and semiconductor, respectively, in GaN-based MIS-HEMTs.
- KSP Keywords
- 5 nm, Device Characterization, Device processing, Displacement Damage, Electrical Devices, GaN-Based, High-electron mobility transistor(HEMT), Metal-insulator-semiconductor(MIS), Threshold voltage shift, gate insulator, proton radiation