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Journal Article Optimization of Charge and Multiplication Layers of 20-GbpsInGaAs/InAlAs Avalanche Photodiode
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Authors
Jae-Sik Sim, Kisoo Kim, Minje Song, Sungil Kim, Minhyup Song
Issue Date
2021-10
Citation
ETRI Journal, v.43, no.5, pp.916-922
ISSN
1225-6463
Publisher
한국전자통신연구원 (ETRI)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.4218/etrij.2020-0427
Project Code
20HB1200, A Generic Technology Study for Quantum Photonic Integrated Circuits, Ju Jung Jin
Abstract
We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4혻GHz, and the bit rate was approximately 20.8혻Gbps.
KSP Keywords
20 Gbps, 3 V, 3-dB bandwidth, Avalanche photo diode(APD), Bit Rate, Breakdown voltage(BDV), Doping concentration, Punch-through
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
Type 4: