상세정보
학술지
Optimization of Charge and Multiplication Layers of 20-GbpsInGaAs/InAlAs Avalanche Photodiode
- 발행일
- 202110
- 출처
- ETRI Journal, v.43 no.5, pp.916-922
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 20HB1200, 양자 광집적회로 원천기술 연구, 주정진
- 초록
- We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4혻GHz, and the bit rate was approximately 20.8혻Gbps.
- KSP 제안 키워드
- 20 Gbps, 3 V, 3-dB bandwidth, Avalanche photo diode(APD), Bit Rate, Breakdown voltage(BDV), Doping concentration, Punch-through
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