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Conference Paper
Selective Doping in Drain Region of Amorphous Oxide Thin- Film Transistor by Electrical Stress under Illumination
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- Authors
- Himchan Oh, Chi-Sun Hwang
- Issue Date
- 2021-12
- Citation
- International Display Workshops (IDW) 2021, pp.196-198
- Language
- English
- Type
- Conference Paper
- Abstract
- A unique method to enhance the electrical performance of oxide thin film transistor (TFT) is presented. Photoinduced holes and positively charged oxygen vacancies are attracted to near the drain terminal by applying negative bias to gate and drain electrode under illumination. These positive charges gather electrons to form n+ doped region and thus lower the parasitic resistance. The field-effect mobility (μsat) increased up to 80% via this electrical forming method.
- KSP Keywords
- Amorphous oxide, Drain electrode, Negative bias, Oxygen vacancies, Positive charge, Positively charged, Selective doping, Thin-Film Transistor(TFT), electrical performance, electrical stress, field-effect mobility