상세정보
학술지
Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction
- 발행일
- 202112
- 출처
- Materials, v.14 no.24, pp.1-8
- ISSN
- 1996-1944
- 출판사
- MDPI
- 협약과제
- 21ZB1100, ICT 창의기술 개발, 백용순
- 초록
- Neuromorphic devices have been investigated extensively for technological breakthroughs that could eventually replace conventional semiconductor devices. In contrast to other neuromorphic devices, the device proposed in this paper utilizes deep trap interfaces between the channel layer and the charge-inducing dielectrics (CID). The device was fabricated using in-situ atomic layer deposition (ALD) for the sequential deposition of the CID and oxide semiconductors. Upon the application of a gate bias pulse, an abrupt change in conducting states was observed in the device from the semiconductor to the metal. Additionally, numerous intermediate states could be implemented based on the number of cycles. Furthermore, each state persisted for 10,000 s after the gate pulses were removed, demonstrating excellent synaptic properties of the long-term memory. Moreover, the variation of drain current with cycle number demonstrates the device's excellent linearity and symmetry for excitatory and inhibitory behaviors when prepared on a glass substrate intended for transparent devices. The results, therefore, suggest that such unique synaptic devices with extremely stable and superior properties could replace conventional semiconducting devices in the future.
- KSP 제안 키워드
- Abrupt change, Atomic Layer Deposition, Channel layer, Cycle number, Deep traps, Drain current, Glass substrate, In-Situ, Intermediate states, Long-term memory, Oxide semiconductor
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