상세정보
학술지
Highly Efficient Hybrid Light-Emitting Transistors incorporating MoOx/Ag/MoOx Semi-Transparent Electrodes
- 저자
- 박유정, 송애란, 정권범, 김태엽, Bright Walker, 서정화
- 발행일
- 202201
- 출처
- Journal of Materials Chemistry C, v.10 no.3, pp.880-885
- ISSN
- 2050-7526
- 출판사
- Royal Society of Chemistry (RSC)
- 협약과제
- 21HR4600, 공공 업무·임무용 정보통신자원의 노출을 최소화하는 지능적 스텔스화 기술개발, 박혜숙
- 초록
- Light-emitting transistors (LETs) have recently emerged as a promising type of optoelectronic device which incorporates the switching function of a transistor with a light-emitting function. Zinc oxynitride (ZnON) based organic?밿norganic hybrid LETs (HLETs) have recently shown excellent characteristics in this context, including very low threshold voltage (<5 V), high mobility (up to 5.3 cm2 V?닋1 s?닋1) and brightness of 1.64 × 104 cd m?닋2, a significant improvement compared to organic based LETs. Despite remarkably improved performance, the external quantum efficiency (EQE) of HLETs was ~0.1%, leaving room for additional improvement. To overcome the low EQEs of HLETs, we have investigated the electrical and optical characteristics of HLETs incorporating MoOx/Ag/MoOx semi-transparent electrodes with variable Ag layer thickness. HLETs with the architecture MoOx/Ag/MoOx (8/15/15 nm) exhibited an electron mobility of 1.06 cm2 V?닋1 s?닋1 with on/off ratio of 1.05 × 104, a maximum brightness of 2.09 × 104 cd m?닋2 and a greatly improved EQE of up to 3.31%. This study provides valuable information about the electrical and optical properties of HLETs with oxide/metal/oxide (OMO) semi-transparent electrodes and contributes towards a comprehensive understanding of the optoelectronic behavior of LETs.
- KSP 제안 키워드
- 5 nm, Ag layer, Electrical and optical characteristics, Electrical and optical properties, External Quantum Efficiency, High Mobility, Semi-transparent, Switching function, electron mobility, highly efficient, improved performance