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Highly Efficient Hybrid Light-Emitting Transistors incorporating MoOx/Ag/MoOx Semi-Transparent Electrodes
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- Authors
- Yu Jung Park, Ae Ran Song, Kwun-Bum Chung, Tae-Youb Kim, Bright Walker, Jung Hwa Seo
- Issue Date
- 2022-01
- Citation
- Journal of Materials Chemistry C, v.10, no.3, pp.880-885
- ISSN
- 2050-7526
- Publisher
- Royal Society of Chemistry (RSC)
- Language
- English
- Type
- Journal Article
- Abstract
- Light-emitting transistors (LETs) have recently emerged as a promising type of optoelectronic device which incorporates the switching function of a transistor with a light-emitting function. Zinc oxynitride (ZnON) based organic?밿norganic hybrid LETs (HLETs) have recently shown excellent characteristics in this context, including very low threshold voltage (<5 V), high mobility (up to 5.3 cm2 V?닋1 s?닋1) and brightness of 1.64 × 104 cd m?닋2, a significant improvement compared to organic based LETs. Despite remarkably improved performance, the external quantum efficiency (EQE) of HLETs was ~0.1%, leaving room for additional improvement. To overcome the low EQEs of HLETs, we have investigated the electrical and optical characteristics of HLETs incorporating MoOx/Ag/MoOx semi-transparent electrodes with variable Ag layer thickness. HLETs with the architecture MoOx/Ag/MoOx (8/15/15 nm) exhibited an electron mobility of 1.06 cm2 V?닋1 s?닋1 with on/off ratio of 1.05 × 104, a maximum brightness of 2.09 × 104 cd m?닋2 and a greatly improved EQE of up to 3.31%. This study provides valuable information about the electrical and optical properties of HLETs with oxide/metal/oxide (OMO) semi-transparent electrodes and contributes towards a comprehensive understanding of the optoelectronic behavior of LETs.
- KSP Keywords
- 5 nm, Ag layer, Electrical and optical characteristics, External Quantum Efficiency, Highly efficient, Improved performance, Layer thickness, ON/OFF ratio, Optoelectronic devices, Semi-transparent, Switching function