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Journal Article
Analysis of temporal carrier build‐up in reconfigurable field‐effect transistor
- Authors
- Jeong Woo Park, Seong Hyun Lee, Sang Hoon Kim, Tae Moon Roh, Dongwoo Suh
- Issue Date
- 2022-01
- Citation
- Electronics Letters, v.58, no.1, pp.35-37
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- Based on the analysis of the carrier density change of a symmetric gate reconfigurable field-effect transistor that can operate p- or n-type transistors in an integrated circuit (IC), its unique limiting factor, carrier build-up time, is quantitatively derived for operating speed in addition to conventional resistance and capacitance (RC) and transit time effect. Originating from the characteristic of carrier confinement in a channel between two Schottky potential barriers, the carrier build-up time for the operation could take up to ~1000 times longer than the transit time across the channel.
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC)
(CC BY NC)
