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Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
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- Authors
- Seokho Moon, Sung-Jae Chang, Youngjae Kim, Odongo Francis Ngome Okello, Jiye Kim, Jaewon Kim, Hyun-Wook Jung, Ho-Kyun Ahn, Dong-Seok Kim, Si-Young Choi, JaeDong Lee, Jong-Won Lim, Jong Kyu Kim
- Issue Date
- 2021-12
- Citation
- ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592
- ISSN
- 1944-8244
- Publisher
- American Chemical Society (ACS)
- Language
- English
- Type
- Journal Article
- Abstract
- While two-dimensional (2D) hexagonal boron nitride (h-BN) is emerging as an atomically thin and dangling bond-free insulating layer for next-generation electronics and optoelectronics, its practical implementation into miniaturized integrated circuits has been significantly limited due to difficulties in large-scale growth directly on epitaxial semiconductor wafers. Herein, the realization of a wafer-scale h-BN van der Waals heterostructure with a 2 in. AlGaN/GaN high-electron mobility transistor (HEMT) wafer using metal-organic chemical vapor deposition is presented. The combination of state-of-the-art microscopic and spectroscopic analyses and theoretical calculations reveals that the heterointerface between ~2.5 nm-thick h-BN and AlGaN layers is atomically sharp and exhibits a very weak van der Waals interaction without formation of a ternary or quaternary alloy that can induce undesired degradation of device performance. The fabricated AlGaN/GaN HEMT with h-BN shows very promising performance including a cutoff frequency (fT) and maximum oscillation frequency (fMAX) as high as 28 and 88 GHz, respectively, enabled by an effective passivation of surface defects on the HEMT wafer to deliver accurate information with minimized power loss. These findings pave the way for practical implementation of 2D materials integrated with conventional microelectronic devices and the realization of future all-2D electronics.
- KSP Keywords
- 2D material, 5 nm, AlGaN/GaN HEMTs, As 2, Dangling bonds, Epitaxial wafer, High performance, High-electron mobility transistor(HEMT), Insulating layer, Metalorganic chemical vapor deposition, Microelectronic devices