상세정보
학술지
Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming
- 발행일
- 202201
- 출처
- IEEE Transactions on Electron Devices, v.69 no.1, pp.120-126
- ISSN
- 0018-9383
- 출판사
- IEEE
- 협약과제
- 21JB2800, 초고해상도/초유연 디스플레이 백플레인 핵심소재 기술 개발, 황치선
- 초록
- In this study, we present programming speed enhancement in amorphous oxide semiconductor memory thin-film transistor (TFT). We developed a nonvolatile memory transistor based on InZnSnO back-channel-etch TFT with InGaZnO charge storage layer inserted between gate insulators. We proposed double-gate (DG) and body-contacted (BC) memory structure to improve memory erase speed, which is the most important issue in oxide memory TFTs. DG memory did not show sufficient improvement due to large voltage drop in second gate insulator. BC memory, which can control back-channel potential directly, showed significant improvement on memory program/erase speed.
- KSP 제안 키워드
- Channel potential, Charge storage, Double-gate(DG), Gate insulator, Memory structure, Non-Volatile Memory(NVM), Thin-Film Transistor(TFT), Voltage Drop, amorphous oxide semiconductor, back-channel etch, semiconductor memory