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Journal Article
Frequency Response Estimation of 1.3 μm Waveguide Integrated Vertical PIN Type Ge-on-Si Photodetector Based on the Analysis of Fringing Field in Intrinsic Region
- Authors
- Dongjun Seo, Won-Bae Kwon, Sung Chang Kim, Chang-Soo Park
- Issue Date
- 2019-12
- Citation
- Current Optics and Photonics, v.3, no.6, pp.510-515
- ISSN
- 2508-7266
- Publisher
- 한국광학회
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we introduce a 1.3-쨉m 25-GHz waveguide-integrated vertical PIN type Ge-on-Si photodetector fabricated using a multi-project wafers service based on fringing field analysis in the depletion region. In general, 1.3-쨉m photodetectors fabricated using a commercial foundry service can achieve limited bandwidths because a significant amount of photo-generated carriers are located within a few microns from the input along the device length, and they are influenced by the fringing field, leading to a longer transit time. To estimate the response time, we calculate the fringing field in that region and the transit time using the drift velocity caused by the field. Finally, we compare the estimated value with the measured one. The photodetector fabricated has a bandwidth of 20.75 GHz at-1 V with an estimation error of <3 GHz and dark current and responsivity of 110 nA and 0.704 A/W, respectively.
- KSP Keywords
- 5 GHz, Dark Current, Drift velocity, Estimation error, Frequency response estimation, Fringing field, Ge-on-Si, Multi-project, Photo-generated carriers, Si photodetector, Transit time
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC)
(CC BY NC)
