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학술지 Frequency Response Estimation of 1.3 μm Waveguide Integrated Vertical PIN Type Ge-on-Si Photodetector Based on the Analysis of Fringing Field in Intrinsic Region
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저자
서동준, 권원배, 김성창, 박창수
발행일
201912
출처
Current Optics and Photonics, v.3 no.6, pp.510-515
ISSN
2508-7266
출판사
한국광학회
DOI
https://dx.doi.org/10.3807/COPP.2019.3.6.510
협약과제
19ZK1100, 호남권 지역산업 기반 ICT융합기술 고도화 지원사업, 이길행
초록
In this paper, we introduce a 1.3-쨉m 25-GHz waveguide-integrated vertical PIN type Ge-on-Si photodetector fabricated using a multi-project wafers service based on fringing field analysis in the depletion region. In general, 1.3-쨉m photodetectors fabricated using a commercial foundry service can achieve limited bandwidths because a significant amount of photo-generated carriers are located within a few microns from the input along the device length, and they are influenced by the fringing field, leading to a longer transit time. To estimate the response time, we calculate the fringing field in that region and the transit time using the drift velocity caused by the field. Finally, we compare the estimated value with the measured one. The photodetector fabricated has a bandwidth of 20.75 GHz at-1 V with an estimation error of <3 GHz and dark current and responsivity of 110 nA and 0.704 A/W, respectively.
KSP 제안 키워드
5 GHz, Dark Current, Drift velocity, Field analysis, Frequency response(FreRes), Frequency response estimation, Fringing field, Ge-on-Si, Multi-project, Photogenerated carriers, Si photodetector
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