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학술대회 A 105dB-Gain 500MHz-Bandwidth 0.1Ω-Output-Impedance Amplifier for an Amplitude Modulator in 65nm CMOS
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저자
김철, 채창석, 육영섭, 김이경, 권종기, 조규형
발행일
201002
출처
International Solid-State Circuits Conference (ISSCC) 2010, pp.88-89
DOI
https://dx.doi.org/10.1109/ISSCC.2010.5434037
협약과제
09MB2100, 45nm급 혼성 SoC용 아날로그 회로기술, 권종기
초록
Polar modulation, where a constant-amplitude phase signal is amplified by an efficient switched-mode power amplifier (PA) and an envelope signal is modulated at the drain of the PA, has been proven to improve efficiency and linearity of the PA system. However, the amplitude modulator (AM) used in such modulation systems must have wide bandwidth, low switching ripple and high efficiency. Although several AM structures have been reported the hybrid switching amplitude modulator (HSAM) shows excellent performance [1-3]. The HSAM consists of a linear amplifier as a voltage source and a switching amplifier as a dependant current source. The linear amplifier using voltage feedback defines output voltage with high frequency information in a bandwidth-expanded envelope signal and the switching amplifier using current feedback drives almost all the current to develop output voltage with the help of a current sensing circuit. If the current sensing circuit does not work well, it makes an offset to the switching amplifier and results in additional power consumption of the linear amplifier [2]. To meet a stringent spectral mask, low output impedance of the linear amplifier is needed [1]. In conclusion, wide bandwidth and low output impedance of the linear amplifier, and accurate current sensing are critical points in the design of the HSAM. ©2010 IEEE.
KSP 제안 키워드
65nm CMOS, Amplitude Modulator, Critical point, Current feedback, Current source, Frequency information, High Frequency(HF), Hybrid switching, Linear amplifier, Output Voltage, Output impedance