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학술지 The Origin of the Enhanced Photoresponsivity of the Phototransistor with ZnO1-xSx Single Active Layer
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저자
유종훈, 이우정, 조대형, 김우주, 강성준, 정용덕
발행일
202207
출처
Applied Surface Science, v.590, pp.1-7
ISSN
0169-4332
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.apsusc.2022.153062
초록
We applied zinc oxysulfide (ZnO1-xSx) as a single active layer in a phototransistor by adjusting the S-to-O ratio. The electrical properties and photoresponsivity of the phototransistors were investigated as a function of the S content, x, of the ZnO1-xSx active layer. The incorporation of S atoms in the ZnO1-xSx layer induced a change in the electrical properties and photoresponsivity, especially in the ultraviolet (UV) and visible regions, compared with a ZnO film. The phototransistor with ZnO0.9S0.1 showed the highest performance; for 450 nm light, the photoresponsivity was 8.0 × 102 A/W, and the maximum photosensitivity was 1.7 × 104. By analyzing the chemical states of ZnO1-xSx in the phototransistor, we realized that the origin of the improvement of the photoresponsivity is due to the increase of the number of oxygen vacancies formed by the incorporation of S atoms. Based on the above results, we suggested the mechanism of electron transport in phototransistors with a ZnO1-xSx active layer as a function of S content using band alignment. Consequently, we successfully demonstrated the feasibility of the ZnO1-xSx film as a single active layer in a phototransistor to enhance the photoresponsivity in the UV and visible regions.
키워드
Oxide semiconductor thin-film transistor, Oxygen vacancy, Photoresponsivity, ZnO S 1-x x
KSP 제안 키워드
Active Layer, Chemical states, Electron Transport, Enhanced photoresponsivity, Oxide semiconductor, Oxygen vacancies, S content, Thin-Film Transistor(TFT), UV-Visible, Zinc oxysulfide, ZnO films
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저작자 표시 - 비영리 - 변경금지 (CC BY NC ND)