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Journal Article
Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs
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- Authors
- Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Ilgyu Choi, Sang Kyung Lee, Seung Mo Kim, Byoung Hun Lee, Ho-Kyun Ahn, Jong-Won Lim
- Issue Date
- 2022-07
- Citation
- Current Applied Physics, v.39, pp.128-132
- ISSN
- 1567-1739
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- AlGaN/GaN MIS-HEMTs with adjusted VT were fabricated using a recess gate to investigate the effect on actual operation when the polarity of the gate voltage is opposite in the on- and off-state. The direction and time exponents of VT shift depend on the polarity of the gate bias stress. Electrons detrapping from the Al2O3/AlGaN interface trap site to AlGaN under negative gate bias stress has to overcome the energy barrier, resulting in a higher temperature dependence. In addition, the unaffected gm and SS show that the degradation occurred primarily at the Al2O3/AlGaN interface rather than channel or mobility degradation. For unipolar and bipolar AC stresses, the time exponent of the VT shift during stress time has two values, and a relatively low value during relaxation after bipolar AC stress. These results may be due to the further degradation by Vmin at the broader energy levels of the Al2O3/AlGaN interface.
- KSP Keywords
- AC Stress, Gate bias stress, Off-State, Recess Gate, Trap sites, Vt shift, actual operation, energy barrier, energy levels, gate voltage, interface trap