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학술지 Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs
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저자
강수철, 정현욱, 장성재, 최일규, 이상규, 김승모, 이병훈, 안호균, 임종원
발행일
202207
출처
Current Applied Physics, v.39, pp.128-132
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2022.04.015
협약과제
21IU1200, 국방 무기체계용 핵심 반도체 부품 자립화 플랫폼 개발, 임종원
초록
AlGaN/GaN MIS-HEMTs with adjusted VT were fabricated using a recess gate to investigate the effect on actual operation when the polarity of the gate voltage is opposite in the on- and off-state. The direction and time exponents of VT shift depend on the polarity of the gate bias stress. Electrons detrapping from the Al2O3/AlGaN interface trap site to AlGaN under negative gate bias stress has to overcome the energy barrier, resulting in a higher temperature dependence. In addition, the unaffected gm and SS show that the degradation occurred primarily at the Al2O3/AlGaN interface rather than channel or mobility degradation. For unipolar and bipolar AC stresses, the time exponent of the VT shift during stress time has two values, and a relatively low value during relaxation after bipolar AC stress. These results may be due to the further degradation by Vmin at the broader energy levels of the Al2O3/AlGaN interface.
KSP 제안 키워드
AC Stress, Gate bias stress, Off-State, Recess Gate, Trap sites, Vt shift, actual operation, energy barrier, energy levels, gate voltage, interface trap