본 논문에서는 전기 자동차를 비롯한 고전압 배터리 시스템에서 반드시 필요로하는 프리차지 스위치에 있어, 기존의 기계식 릴레이가 가지고 있는 단점들을 극복하기 위해 서로 다른 반도체 3종을 프리차지 스위치로 시험한 결과를 비교 분석한다. 반도체를 구동하기 위한 Driver IC 없이, 가장 간단하면서도 저가로 게이트를 절연 구동하기 위해 optocoupler를 사용하여 insulated gate bipolar transistor (IGBT), silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET), MOS-controlled thyristor(MCT) 등 3종의 반도체를 각각 프리차지 스위치로 적용하고, 배터리 전압에 따른 특성을 평가하였다. IGBT와 SiC MOSFET은 600V 이상에서 파괴가 된 반면, MCT는 800V에서도 정상동작하였다. 이로부터 MCT를 프리차지 스위치로 사용할 경우, 기존의 기계식 릴레이 적용 시스템 대비 부피와 무게 및 크기를 줄일 수 있고, 제품의 수명 및 신뢰성 증가, 그리고 가격경쟁력도 지닐 수 있다는 데에 큰 의의가 있다.
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