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학술지 Electroabsorption modulator-integrated distributed Bragg reflector laser diode for C-band WDM-based networks
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저자
권오기, 이철욱, 김기수
발행일
202205
출처
ETRI Journal, v.권호미정, pp.1-8
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.2021-0284
초록
We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBR-LD using a butt?뱂oint coupling method. The fabricated chip shows a threshold current of approximately 8혻mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.
키워드
25 Gb/s NRZ, 50 Gb/s PAM-4, distributed Bragg reflector laser diode, electroabsorption modulator, wavelength division multiplexing, wavelength tuning
KSP 제안 키워드
1550 nm, 4-level pulse amplitude modulation(PAM-4), 50 GB, Bragg wavelength, C-band, Coupling method, Current injection, Distributed Bragg reflector laser, High data rate, Intensity-modulated, Laser diode(LD)
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