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Detail
Journal Article
Electroabsorption modulator‐integrated distributed Bragg reflector laser diode for C‐band WDM‐based networks
- Authors
- Oh-Kee Kwon, Chul-Wook Lee, Ki-Soo Kim
- Issue Date
- 2023-02
- Citation
- ETRI Journal, v.45, no.1, pp.163-170
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBR-LD using a butt?뱂oint coupling method. The fabricated chip shows a threshold current of approximately 8혻mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.
- KSP Keywords
- 1550 nm, 50 GB, Bragg wavelength, Coupling method, Current injection, Distributed Bragg reflector laser, High data rate, Intensity-modulated, Laser diode(LD), Red-shift, Threshold current
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
