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Conference Paper Effect of T-gate Structure on RF Characteristic in AlGaN/GaN HEMTs
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Authors
Hyun-Wook Jung, Dohyun Kim, Ho-Kyun Ahn, Jong-Won Lim
Issue Date
2022-07
Citation
International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1
Language
English
Type
Conference Paper
KSP Keywords
AlGaN/GaN HEMTs, T-Gate