We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits.
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J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
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