상세정보
학술대회
A Surface-Micromachined MEMS Acoustic Sensor with 0.8 um CMOS Impedance Transducer
- 발행일
- 201011
- 출처
- SENSORS 2010, pp.1779-1782
- 협약과제
- 10MB3300, 스마트&그린 빌딩용 자가충전 지능형 센서노드 플랫폼 개발, 김종대
- 초록
- A surface-micromachined capacitive-type micro-electro-mechanical system (MEMS) acoustic sensor with 0.8 μm CMOS impedance transducer is presented. This sensor chip is composed of a surface-micromachined MEMS microphone with X-shape bottom electrode anchors and a simple monolithic integrated impedance transducer based on 0.8 μm CMOS process (1 poly-2 metals), where Metal 2 in the CMOS process is also used as a bottom electrode for a sensor part. The total chip area is 0.8 mm x 0.9 mm. The Si MEMS acoustic sensor proposed in this paper has a diameter of 500 μm and a back chamber depth of 20 μm. It shows a zero-bias capacitance of 1.25 pF at 1 kHz and a pull down voltage of 33.4 V, and an open-circuit sensitivity of 0.53 mV/Pa on a bias of 9 V. In addition, the impedance transducer transfers a high output impedance to a low input impedance with a 9.5 dB gain at an input condition of 5 mV at 1 kHz. ©2010 IEEE.
- KSP 제안 키워드
- Acoustic Sensor, Bottom electrode, CMOS Process, Capacitive-type, Chip area, High output impedance, Integrated impedance, Low input impedance, MEMS Microphone, Micro-electro-mechanical system(MEMS), Monolithic integrated