상세정보
학술대회
A Wide-band RF Front-end with Linear Active Notch Filter for Mobile TV Applications
- 발행일
- 201005
- 출처
- Radio Frequency Integrated Circuits Symposium (RFIC) 2010, pp.135-138
- 협약과제
- 09MB2200, 차세대 무선 융합 단말용 Advanced Digital RF 기술 개발, 유현규
- 초록
- This paper presents a wide-band RF front-end with linear active notch filter covering both T-DMB and DVB-H. A single to differential converter with the low amplitude/phase error and 6dB step RF VGA using the capacitor are implemented. Also, highly linear and Q-enhanced tunable active inductor is proposed. The linear active notch filter rejects GSM band up to 23dB and achieves 20dB linearity improvement. The RF front-end is fabricated on 90nm CMOS technology and consumes 29.7mW. © 2010 IEEE.
- KSP 제안 키워드
- 90 nm CMOS technology, Active inductor, DVB-H, GSM band, Highly linear, Low amplitude, Mobile TV, Q-enhanced, RF front end, TV applications, Wide band