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Conference Paper
A 28GHz-band integrated GaAs Power Amplifier for 5G Mobile Communications
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- Issue Date
- 2022-10
- Citation
- International SoC Design Conference (ISOCC) 2022, pp.376-377
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper describes a power amplifier (PA) that performs around 28 GHz for fifth generation mobile networks (5G) using 0.15-μm E-mode GaAs pseudomorphic high electron mobility transistor (pHEMT) devices. The power amplifier with three-stage common-source architecture achieved a small signal gain of 16.7 dB, the output 1-dB compression power (OP1dB) of 22.8 dBm, and the power added efficiency at peak power of 20.5% at 28 GHz under 3-V supply voltage. At 27 GHz the small signal gain is 18 dB, the OP1dB is 21.7 dBm, and the power added efficiency at peak power is 16.3% under 3-V supply voltage.
- KSP Keywords
- 28 GHz, 5G mobile communication, E-mode, Fifth Generation(5G), Fifth Generation Mobile Networks, GaAs power amplifier, High electron mobility transistor(HEMT), Peak power, Power added efficiency(PAE), Small signal gain, Supply voltage