상세정보
학술지
53 GBd PAM-4 fully-integrated silicon photonics transmitter with a hybrid flip-chip bonded laser
- 발행일
- 202211
- 출처
- Optics Express, v.30 no.23, pp.41980-41998
- ISSN
- 1094-4087
- 출판사
- Optical Society of America (OSA)
- 협약과제
- 22HH6900, [전문연구실/통합과제] 광 클라우드 네트워킹 핵심기술 개발 , 이준기
- 초록
- We present a fully-integrated single-lane 53 GBd PAM-4 silicon photonics (SiPh) transmitter (Tx) with a flip-chip bonded laser diode (LD). The LD is butt-coupled to a Si edge coupler including a SiO2 suspended spot-size converter. The coupled power exceeds 10 dBm with a 1 dB allowable misalignment of 2.3 쨉m. The RF and eye performances of the Tx are evaluated. Extinction ratio >5 dB is obtained at 3.5 Vppd voltage swing. Aided by silicon capacitors, the Tx decouples parasitic inductances leading to remarkable improvements in the eye openings and transmitter dispersion eye closure quaternary by 1.16 dB. By implementing the fully-integrated Tx with driver packaging, we successfully demonstrate 106 Gb/s real-time operation satisfying KP4-FEC threshold at ??5 dBm receiver sensitivity.
- KSP 제안 키워드
- 4-level pulse amplitude modulation(PAM-4), Eye closure, Fully integrated, Laser diode(LD), Parasitic inductance, Spot size converter(SSC), Voltage swing, extinction ratio, flip chip, integrated silicon photonics, real-time operation