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Conference Paper
Large-Area GaN FET Modeling Using Operating Temperature Distribution Characteristics of Gate Channels
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- Authors
- Woojin Chang, Dong-Min Kang, Sanghun Lee
- Issue Date
- 2022-10
- Citation
- International Conference on Consumer Electronics (ICCE) 2022 : Asia, pp.684-687
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper presents the large-area GaN FET modeling using operating temperature distribution characteristics of gate channels of large-area GaN FET by an infrared microthermal measurement system. This method is one of candidates to overcome various limitations in large-area GaN FET modeling. The DC and RF power characteristic accuracies of the improved model compared the existing model of WINSEMI0.45 μm GaN FETwith 10-fingerand 4 mm gate width are more than 98% at DC of 040 V and RF power of 3.7 GHz.
- KSP Keywords
- GaN FET, Gate Width, Improved model, Operating Temperature, Power characteristics, RF Power, Temperature distribution characteristics, large area, measurement system