상세정보
학술대회
Large-Area GaN FET Modeling Using Operating Temperature Distribution Characteristics of Gate Channels
- 발행일
- 202210
- 출처
- International Conference on Consumer Electronics (ICCE) 2022 : Asia, pp.684-687
- 협약과제
- 22HB3600, 5G 통신을 위한 3.7GHz 300W급 고출력 GaN 파워트랜지스터 기술 및 전력증폭기 개발, 장우진
- 초록
- This paper presents the large-area GaN FET modeling using operating temperature distribution characteristics of gate channels of large-area GaN FET by an infrared microthermal measurement system. This method is one of candidates to overcome various limitations in large-area GaN FET modeling. The DC and RF power characteristic accuracies of the improved model compared the existing model of WINSEMI0.45 μm GaN FETwith 10-fingerand 4 mm gate width are more than 98% at DC of 040 V and RF power of 3.7 GHz.
- KSP 제안 키워드
- GaN FET, Gate Width, Improved Model, Power characteristics, RF Power, Temperature distribution characteristics, large area, measurement system, operating temperature