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Conference Paper
A Ku-band Cascode Low Noise Amplifier using InGaAs E-mode 0.15-um pHEMT Technology
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- Issue Date
- 2022-05
- Citation
- Global Symposium on Millimeter-Waves & Terahertz (GSMM) 2022, pp.32-34
- Language
- English
- Type
- Conference Paper
- Abstract
- Low-power operation and ease of system integration are increasingly important in a system using multiple amplifiers in parallel, such as a phased array. In this paper, a Kuband pseudomorphic high electron mobility transister (pHEMT) low-noise amplifier (LNA) that can be applied to such a system was designed and measured. The chip was fabricated using InGaAs Enhanced-mode (E-mode) 0.15-um pHEMT process. And by applying a cascode configuration that reuses current to the circuit, it consumes low power and has high gain. The current consumption is 5mA at 4V supply voltage, and the gain is 21.3 dB at 16 GHz. The 3-dB bandwidth of the LNA is 2.59 GHz and noise Figure (NF) is 1.46 dB at 16 GHz. OP1dB is 8.05 dBm and IP1dB is -10.8 dBm. The size of the entire chip including the electrostatic discharge (ESD) protection pad is 1.5x0.95 mm 2 .
- KSP Keywords
- 3-dB bandwidth, 6 GHz, Current consumption, E-mode, Electrostatic discharge (ESD) protection, High electron mobility, Ku-Band, Noise Figure(NF), Supply voltage, cascode configuration, high gain