상세정보
학술지
InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications
- 저자
- Ting-Yuan Chang, 김현석, William A. Hubbard, Khalifa M. Azizur-Rahman, 주정진, 김제형, 이욱재, Diana Huffaker
- 발행일
- 202203
- 출처
- ACS Applied Materials & Interfaces, v.14 no.10, pp.12488-12494
- ISSN
- 1944-8244
- 출판사
- American Chemical Society (ACS)
- 협약과제
- 20HB1200, 양자 광집적회로 원천기술 연구, 주정진
- 초록
- Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their power-dependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.
- KSP 제안 키워드
- 3D geometry, InP nanowires, Nanowire heterostructures, Next-generation, Non-classical, Peak intensity, Secure Communication, Sharp interface, Silicon photonics, Telecom band, gold catalysts