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InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications
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- Authors
- Ting-Yuan Chang, Hyunseok Kim, William A. Hubbard, Khalifa M. Azizur-Rahman, Jung Jin Ju, Je-Hyung Kim, Wook-Jae Lee, Diana Huffaker
- Issue Date
- 2022-03
- Citation
- ACS Applied Materials & Interfaces, v.14, no.10, pp.12488-12494
- ISSN
- 1944-8244
- Publisher
- American Chemical Society (ACS)
- Language
- English
- Type
- Journal Article
- Abstract
- Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their power-dependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.
- KSP Keywords
- 3D geometry, InP nanowires, Next-generation, Peak intensity, Quantum dot(Qdot), Secure Communication, Sharp interface, Silicon photonics, Telecom band, gold catalysts, monolithically integrated